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LaAlO3 LaAlO3 lanthanum aluminate acid is a high-temperature superconducting single crystal substrate material. It is a good substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films, and its excellent dielectric properties are suitable for low loss microwave amplification devices and dielectric resonance applications.
Main features
Low dielectric constant
Low dielectric loss
Good lattice matching
Low coefficient of thermal expansion
Good chemical stability
Bandgap width
Large specific surface area
Good thermal stability
Typical applications
High-temperature superconducting thin-film epitaxial substrate
Macromagnetic thin-film epitaxial substrate
Microwave amplification and dielectric resonance
Material Properties
| Molecular formula | LaAlO3 |
| Growing directions | Czochralski |
| Crystal structure | Hexagonal |
| Lattice constant | a = 5.357Åc = 13.22Å |
| Hardness | 6.5 Mohs |
| Density | 6.52g/cm3 |
| Melting point | 2080℃ |
| Dielectric constant | ε=21 |
| Thermal expansion coefficient to heat | 10×10-6/℃ |
| Loss tangent | ～3×10-4@300K,～0.6×10-4@77K |
Product Parameter
| Size | Maximum diameter of 76.2mm (3 inches) |
| Thickness | The 0.5mm is customizable |
| Polishing | One-sided throw or two-sided throw |
| Crystal orientation | <100><110><111> |
| Surface roughness Ra | Ra≤1nm |
| Crystal direction accuracy | ±0.2° |
| Positioning edge accuracy | ± 2° (special requirements up to within 1° /) |
| Crystallization Angle | customizable |
