Silicon Si uses:
used as a semiconductor material
high power transistor
rectifier
Solar cells, etc.
Product Parameters
Crystal structure | face centered cubic | ||
Melting point (°C) | 1420 | ||
density | 2.4 (g/cm 3 ) | ||
doping substance | Not adulterated | Doped with B | Doped with P |
type | I | P | N |
Resistivity | Ø 1000Ωcm | 10-3~40Ωcm | 10-3~40Ωcm |
EPD | ≤100∕ cm2 | ≤100∕ cm2 | ≤100∕ cm2 |
Oxygen content (∕cm3) | ≤1~1.8×10 18 | ≤1~1.8×10 18 | ≤1~1.8×10 18 |
Carbon content (∕cm3) | ≤5×10 16 | ≤5×10 16 | ≤5×10 16 |
Dimensions ( mm ) | 10×3, 10×5, 10×10, 15×15 , 2/3/4 inches, etc.Dia50.8mm, Dia76.2mm, Dia100mmSubstrates with special directions and sizes can be customized according to customer needs | ||
thickness | 0.5mm, 1.0mm | ||
Dimensional tolerance | <±0.1mm | ||
Thickness Tolerance | <±0.015mm special requirements can reach <±0.005mm) | ||
polishing | single or double sided | ||
Orientation Accuracy of Crystal Plane | ±0.5° | ||
Edge Orientation Accuracy | 2° (special requirements can reach within 1°) | ||
orientation | <100>, <110>, <111>, etc. | ||
Package | Class 100 clean bag, Class 1000 ultra-clean room |