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Silicon carbide substrates can be divided into conductive substrates and semi-insulating substrates according to resistivity. Power devices grown on conductive substrates made of SiC substrates can be used in new energy vehicles, power grids, photovoltaic inverters, High-voltage work scenes such as rail transit. Microwave radio frequency devices grown on GaN epitaxy on semi-insulating substrates are mainly used in communication scenarios such as radio frequency switches, power amplifiers, filters, etc., and can meet the requirements of 5G communication for high frequency performance and high power processing performance.
Main Feature
Larger bandgap width, higher temperature tolerance. Higher breakdown electric field, withstand higher voltage. Higher thermal conductivity, better heat dissipation. Larger electron saturation drift rate, with high frequency characteristics.
Typical Applications
high-frequency high-power power electronic devices Schottky diodes, MOSFET, JFET, BJT, PiN Diodes, IGBT
optoelectronic devices: mainly used in substrate materials of GaN/SiC blue LEDs (GaN/SiC) LEDs
Product Parameters
| growth method | MOCVD |
| Crystal structure | hexagonal |
| Lattice constant | a=3.07 Å, c=15.117 Å |
| Sort order | ABCACB |
| direction | Growth axis or deviation <0001> 3.5º |
| Bandgap | 3.02 eV (indirect) |
| hardness | 9.2 (mohs) |
| density | 3.21g/ cm3 |
| Refractive index | no=2.55, ne=2.59 |
| Heat conduction@300K | 3 - 5 x 10 6 W/m |
| Dielectric constant | e(11)=e(22)=9.66 e(33)=10.33 |
| size | 10x10mm, 15x15mm, 20x20mm, Dia50.8mm, Dia76.2mm, Dia102.4mm |
| thickness | Thickness: 0.35mm |
| polishing | single or double sided |
| crystal direction | <001>±0.5° |
| Orientation Accuracy of Crystal Plane: | ±0.5° |
| Edge Orientation Accuracy: | 2° (special requirements can reach within 1°) |
| Bevel Wafer | Can be tilted at a specific angle (tilt angle 1°-45°) |
| Ra: | ≤5Å (5µm×5µm) |
| Package | Class 100 clean bag, Class 1000 ultra-clean room |
