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Typical Application:
Materials such as semiconductor devices, infrared optical devices, and solar cell substrates are produced.
Product Parameters
| growth method | Tira method | ||
| Crystal structure | cube | ||
| Lattice constant | a=5.65754 Å | ||
| density | 5.323g/ cm3 | ||
| melting point | 937.4°C | ||
| doping substance | Not adulterated | Doped with Sb | Ga-doped |
| type | / | N | P |
| Resistivity | >35Ωcm | 0.01~35Ωcm | 0.05~35Ωcm |
| EPD | ＜4×10 3 ∕cm 2 | ＜4×10 3 ∕cm 2 | ＜4×10 3 ∕cm 2 |
| size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20, | ||
| D50.8mm, D76.2mm , D100mm | |||
| thickness | 0.5mm, 1.0mm | ||
| polishing | single or double sided | ||
| crystal direction | <100>, <110>, <111>, ±0.5° | ||
| Orientation Accuracy of Crystal Plane: | ±0.5° | ||
| Edge Orientation Accuracy: | 2° (special requirements can reach within 1°) | ||
| Bevel Wafer | Can be tilted according to a specific angle (tilt angle 1°-45°) | ||
| Ra: | ≤5Å (5µm×5µm) | ||
| Package | Class 100 clean bag, Class 1000 ultra-clean room | ||
