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Diamond is a wide bandgap semiconductor material with excellent performance and has many advantages
Extremely high thermal conductivity: thermal conductivity 2200W/mK, diamond has the highest thermal conductivity at room temperature ; extremely high dielectric breakdown characteristics: breakdown electric field is 107V/cm, 50 times that of GaAs, 2 times that of GaN, SiC 2.5 times ; extremely high power capacity: the allowable power capacity is more than 2500 times that of Si material; especially suitable for making high-power electronic devices; low dielectric constant: the dielectric constant is 5.7, about 1/2 of GaAs , which is less than half of InP ; high saturation carrier velocity: the saturation carrier velocity is 12.7 times that of GaAs, Si or InP, and maintains a high rate when the electric field strength increases ; high carrier mobility: electron mobility It is 4500c㎡/(V s), which is higher than most materials, and is suitable for making high-frequency electronic devices.
Main Feature
Wide light transmission range (220nm~50um)
Higher thermal absorption coefficient than other optical materials
Ultra low absorption
Chemical damage and scratch resistance
Shape and size can be customized
low birefringence
Material Properties
| Bulk density (g/cm 3 ) | 3.3216 |
| Thermal conductivity (W/(m*K)) | TC.1200;T.C1500;T.C1800 |
| Thermal diffusivity (cm^2/s) | 6.6; 8.2; 9.9 |
| Coefficient of thermal expansion (RT-700°C) (10 -6 K -1 ) | 3.1962 |
| Moh's hardness | >10 |
| Tensile strength (Mpa) | 450~1100 |
| Young's modulus (GPa) | 1000~1100 |
| Dielectric constant (1MHz) | 5.68 |
| Dielectric loss (1MHz) | 6.2*10 -8 |
| Volume resistance (25°C, 'Ω cm) | 2.95*1013 |
| Insulation withstand voltage (V/mA) | DC 5.5KV/1.5mA |
| Transmittance | 40%~65% |
| Infrared absorption coefficient (cm -1 @1.064um) | 0.3979~0.1871 |
| Fine Polishing - Surface Roughness (Front) | Ra＜1nm |
| Surface roughness (back side) | Ra＜200nm |
| TTV | ＜1um（Ø25mm） |
| Warpage | ＜1um（Ø25mm） |
| Flatness PV (fringe@633nm) | 1.5fringe（Ø25mm） |
Single Crystal Diamond Product Parameters
| length*width | 10*10mm can be customized |
| Length and Width Tolerance | ±0.05mm |
| thickness | 0.2-2mm |
| Thickness Tolerance | 0.1mm |
| Crystal Orientation (Miscut) | ±3° |
| crystallography | Usually 100% single sector {100} |
| Horizontal dimension measurement | to the smaller side |
| Edge features | <0.2mm |
| edge orientation | Edge<100>&<110> |
| facing towards | {110} |
| edge laser cut | 3° |
| 1st and 2nd surface roughness | Polished, Ra<20nm |
| Thermal expansion coefficient | 10( -6 )K −1 |
| Thermal conductivity | 2200 W/(mk) |
| nitrogen content | ① Ppb level: 20-50ppm; ② Ppm level: 20-30ppm |
