Nd:YVO 4 neodymium-doped yttrium vanadate crystal is a laser crystal with excellent comprehensive performance for making semiconductor pumped solid-state lasers.
Product Description
It is widely used in machinery, material processing, spectroscopy, wafer inspection, display, medical testing, laser printing, Data storage and other fields. It has the characteristics of good thermal conductivity, large stimulated emission cross section, high laser damage threshold, absorption bandwidth, and absorption peak at about 808nm. Because of these advantages, small crystals can be used to make smaller laser devices. Another feature of the Nd:YVO 4 crystal is that it is uniaxial, which makes it emit linearly polarized light. Combined with a frequency doubling crystal, an all-solid-state laser with three wavelengths of green, blue, and red can be realized. Now Nd:YVO 4 lasers have been widely used in many fields such as machinery, material processing, spectroscopy, wafer inspection, display, medical detection, laser printing, and data storage. Moreover, Nd:YVO 4 diode-pumped solid-state lasers are rapidly replacing the traditional water-cooled ion lasers and lamp-pumped lasers in the market, especially in terms of miniaturization and single longitudinal mode output. It can be used in laser diode-pumped all-solid-state (DPSS) micro lasers, lidar, and remote sensing satellite products.
Main Features
High absorption coefficient , large stimulated emission cross section , absorption bandwidth , high damage threshold , uniaxial crystal , good physical and optical properties
Material Properties
Crystal structure | Zircon tetragon, space group D4h-I4/amd |
Lattice constant | a=b=7.12, c=6.29 |
Density | 4.22g/ cm3 |
Melting point | 1825 |
Thermal conductivity / (W m -1 K -1 @ 25°C) | 5.2 |
Thermo-optical coefficient (dn/dT) | dn o /dT=8.5×10 -6 /K; dn e /dT=2.9×10 -6 /K |
Coefficient of thermal expansion/(10 -6 K -1 @ 25°C) | a = 4.43, c = 11.4 |
Hardness (Mohs) | 4~5 |
Product Parameters
Doping concentration | 0.07%~3%, ±0.05%(at%<1%),±0.1%(at%≥1%) |
Orientation | A-cut/C-cut ±0.5 ° |
Dimensional tolerance | ±0.1mm |
Flatness | λ/10 @632.8nm |
Wavefront distortion | λ/10 @632.8nm |
Surface finish | 10/5 MIL-O-13830B |
Parallelism | 10″ |
Perpendicularity | 10′ |
Chamfer | <0.1mm @45deg. |
Chipping | <0.1mm |
Clear aperture | >95% |
Coating | AR/HR/PR is customized according to customer requirements |
Damage threshold | 7.5J/cm 2 @1064nm, TEM00, 10ns, 10Hz |