Nd:YAG Nd- Doped Yttrium Aluminum Garnet

Nd:YAG Nd -doped yttrium aluminum garnet is the solid-state laser material with the best comprehensive performance. It has the characteristics of high gain, low laser threshold, good thermal conductivity and thermal shock, and is suitable for various working modes ( continuous , pulse , Q-switch, Mode-locked ), often used in near-far infrared solid-state lasers and double frequency, triple frequency applications, and widely used in scientific research, medical, industrial , military and other fields.


​Main Feature

High gain , low threshold , high efficiency , high optical quality , low loss , high mechanical strength , excellent thermal conductivity and thermal shock resistance are suitable for various laser working modes (continuous, pulsed, Q-switched, mode-locked, frequency multiplied, etc. ) high average power solid-state lasers.

Material Properties

Crystal structureCubic system
Lattice constant12.01 Å
Melting point1970°C
Moh's hardness8.5
Density4.56±0.04g/ cm3
Specific heat0.59J/g.cm 3 @0-20℃
Elastic Modulus310GPa
Young's modulus3.17×10 4 Kg/ mm2
Poisson's ratio0.3
Tensile strength0.13~0.26GPa
Coefficient of thermal expansion[100] 8.2×10 -6 /K @ 0~250℃;[110] 7.7×10 -6 /K @0~250℃[101] [111] 7.8×10 -6 /K @0~250℃
Thermal conductivity14W/m/K @20℃; 10.5W/m/ K@100℃
Thermo-optic coefficient (dn/dT)7.3×10 -6 /K
Thermal shock resistance790W/m


Product Parameters

Doping concentrationNd: 0.1~ 2.5at %
Orientation[111] or [100], ±5°
Wavefront distortion≤λ/10/inch@632.8nm _ _
Extinction Ratio≥ 25dB _
Crystal rod sizeDiameter:< 50 mm, Length:< 220 mm ; can be customized
Dimensional toleranceDiameter: +0.00/-0.05mm, Length: ±0.5mm
Cylindrical processingGrinding , polishing , threading, etc.
Parallelism of end faces≤10"
Perpendicularity between end face and rod axis≤5′
Flatness of end faceλ/10 @632.8nm
Surface Quality10-5 (MIL-O-13830A)
Chamfer0.15±0.05mm
CoatingAnti-reflection coating: R<0.15% @1064nm, R<0.5% @808nm, R<0.15% @532nm,Partial reflection film: R=(10~90)%±2% @1064nmHigh reflection film: R>99.8% @1064nm, R>99.8% @808nm
Damage threshold≥1GW/ cm2 @1064nm, 10ns, 10Hz


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